发明名称 High frequency power amplifier module, and wireless communication system
摘要 A high frequency power amplifier module of a multistage amplifier construction comprising: an input terminal; an output terminal; a control terminal; and a mode switching terminal. The first amplification stage includes a dual gate FET, and a bias voltage according to a signal is applied to the first gate and the second gate of the dual gate FET from the control terminal and the mode switching terminal, and a radio signal from the input terminal is applied to the second gate such as the source of the dual gate FET. In dependence upon the signal from the mode switching terminal, the mode of the high frequency power amplifier module is for the GSM (i.e., for a non-linear amplifying action) and for the EDGE (for a linear amplifying action).
申请公布号 US7145394(B2) 申请公布日期 2006.12.05
申请号 US20050098454 申请日期 2005.04.05
申请人 HITACHI TOHBU SEMICONDUCTOR, LTD. 发明人 NUMANAMI MASAHITO;AKAMINE HITOSHI;SHIBUYA TSUYOSHI;ADACHI TETSUAKI;MORIKAWA MASATOSHI;NUNOGAWA YASUHIRO
分类号 H03F3/16;H03F3/189;H01L29/10;H01L29/417;H01L29/78;H01Q11/12;H03F1/02;H03F1/22;H03F1/32;H03F3/60;H03F3/72;H03G1/00;H04B1/04;H04K1/02 主分类号 H03F3/16
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