| 摘要 |
<p>A method for fabricating a semiconductor device is provided to prevent silicon horns from being formed in a recess gate region by etching a semiconductor substrate after an isolation layer is firstly etched in a recess gate etching process. In an etch process of a recess gate region, a recess gate mask is designed to be a rectangular type instead of a conventional line type in a manner that only a part of the recess gate mask in which a cell transistor is formed is exposed. A gate mask pattern layer for defining a gate region is designed to expose a gate electrode formation part.</p> |
