发明名称 Bumping process to increase bump height
摘要 A bumping process mainly comprises the steps of providing a wafer having a plurality of bonding pads, forming a patterned adhesive layer over the bonding pads, forming a barrier layer and a wetting layer on the patterned adhesive layer and the surface of the wafer, removing the barrier layer and the wetting layer not covering the patterned adhesive layer, forming a plurality of bumps on the patterned wetting layer and reflowing the bumps.
申请公布号 US7144801(B2) 申请公布日期 2006.12.05
申请号 US20040874237 申请日期 2004.06.24
申请人 ADVANCED SEMICONDUCTOR ENGINEERING, INC. 发明人 WENG CHAO-FU
分类号 H01L21/44;H01L21/60 主分类号 H01L21/44
代理机构 代理人
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