SEMICONDUCTOR WAFER AND SEMICONDUCTOR DEVICE FORMED THEREBY

摘要

A semiconductor wafer and a semiconductor device formed thereby are provided to prevent a breakdown of a resist layer due to residual gas by covering a groove with a protective layer. An integrated circuit is formed in an active region(3). A dicing region(4) is formed between adjacent active regions. A seal ring is formed along a periphery of the active area. A first wiring is formed closely to an inner periphery of the seal ring. A protective layer(5) is used for covering the active region. A protective film(7) is formed on the protective layer and is extended to the active region. A second wiring is formed on the protective film and is electrically connected to the integrated circuit. A groove is formed in the protective layer between the seal ring and the first wiring. The groove is covered with the protective film.