发明名称 Semiconductor integrated circuit device
摘要 A semiconductor integrated circuit device includes a magneto-resistive effect element and a plug. The magneto-resistive effect element includes a first magnetic layer whose magnetization direction is fixed and a second magnetic layer whose magnetization direction can be changed. The plug is formed to penetrate through the second magnetic layer in the film thickness direction of the second magnetic layer and used to apply a write magnetic field to the second magnetic layer.
申请公布号 US7145796(B2) 申请公布日期 2006.12.05
申请号 US20040933323 申请日期 2004.09.03
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 FUKUZUMI YOSHIAKI;YODA HIROAKI
分类号 G11C11/00;H01L27/105;G11C11/15;H01L21/8246;H01L43/08 主分类号 G11C11/00
代理机构 代理人
主权项
地址