发明名称 Active matrix display device
摘要 An active matrix display device using a thin film transistor as a switching element in the displaying portion or driving portion is characterized in that said thin film transistor includes an insulating substrate on which a gate electrode, a gate insulating film, a semiconductor layer, a drain electrode, a source electrode and a passivation film are successively laminated. The thin film transistor is further characterized such that the surface portion of the semiconductor layer on the side of the passivation film is porous, which enables the device to be stably driven with a low off-current even in the case of disposing an organic passivation film and a picture element electrode on the thin film transistor.
申请公布号 US7145176(B2) 申请公布日期 2006.12.05
申请号 US20010940885 申请日期 2001.08.29
申请人 HITACHI, LTD. 发明人 KAWASAKI MASAHIRO;ANDO MASAHIKO;WAKAGI MASATOSHI
分类号 G02F1/1333;H01L29/76;G02F1/136;G02F1/1368;G09F9/00;G09F9/30;H01L21/316;H01L21/336;H01L29/786 主分类号 G02F1/1333
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