| 摘要 |
A method for forming a contact of a semiconductor device makes a hard mask layer thinner by securing a photoresist margin to the hard mask layer. An HDP(High Density Plasma) layer(102) and a patterned hard mask layer(104) are formed on a semiconductor substrate(100) having a predetermined pattern. The HDP layer is etched by using the patterned hard mask layer as a mask. A contact for exposing a predetermined region of the semiconductor substrate is formed by etching the HDP layer. A plug polysilicon layer is formed to bury the contact. The hard mask layer is removed therefrom by performing a cleaning process.
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