发明名称 |
Silicon layer for uniformizing temperature during photo-annealing |
摘要 |
An apparatus and method for uniformizing the temperature distribution across a semiconductor wafer during radiation annealing of process regions formed in the wafer is disclosed. The method includes forming a silicon layer atop the upper surface of the wafer and irradiating the layer with one or more pulses of radiation having wavelengths that are substantially absorbed by the silicon layer. The silicon layer acts to uniformly absorb the one or more radiation pulses and then transfers the heat from the absorbed radiation to the process regions across the wafer.
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申请公布号 |
US7145104(B2) |
申请公布日期 |
2006.12.05 |
申请号 |
US20040787688 |
申请日期 |
2004.02.26 |
申请人 |
ULTRATECH, INC. |
发明人 |
TALWAR SOMIT;THOMPSON MICHAEL O. |
分类号 |
F27B5/14;A21B1/00;A21B1/22;H01L21/265;H01L21/268;H01L21/324;H01L21/8238 |
主分类号 |
F27B5/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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