| 发明名称 |
Multi-layer dielectric containing diffusion barrier material |
| 摘要 |
A method for forming a dielectric is disclosed. The method comprises forming a first dielectric layer over semiconductor material. A diffusion barrier material is introduced into the first dielectric layer. Lastly, a second dielectric layer is formed over the first dielectric layer after the introducing.
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| 申请公布号 |
US7144825(B2) |
申请公布日期 |
2006.12.05 |
| 申请号 |
US20030687271 |
申请日期 |
2003.10.16 |
| 申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
ADETUTU OLUBUNMI O.;LUO TIEN YING;TSENG HSING H. |
| 分类号 |
H01L21/00;H01L21/28;H01L21/469;H01L29/51 |
主分类号 |
H01L21/00 |
| 代理机构 |
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