MATHODE OF MANUFACTURGING SEMICONDUCTOR DEVICE

摘要

A method for fabricating a semiconductor device is provided to planarize the surface of a substrate by performing a rapid thermal process and a laser annealing process on the surface of an uneven substrate damaged by an ion implantation process. Ions are implanted into a semiconductor substrate(1) while the surface of the semiconductor substrate is exposed. A rapid thermal process is performed on the surface of the semiconductor substrate. Laser is irradiated to the surface of the semiconductor substrate at an energy level of 250~1000 milliJoule/square centimeter in a nitrogen atmosphere. An insulation layer(2) is formed on the semiconductor substrate.