APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE CAPABLE OF RELIABLE GAP-FILL PROCESSING AND METHOD FOR GAP-FILL PROCESSING USING THE SAME

摘要

A semiconductor fabricating apparatus capable of performing a reliable gap-fill process is provided to obtain uniform etching effect even if the thickness of a deposited oxide layer varies, by etching an oxide layer by an EPD(end point detection) method instead of a conventional time etching method. A chuck(118) on which a wafer is placed is disposed in a chamber(105). Plasma of etching gas used in a process for etching the wafer is generated in the chamber. A sensor(130) detects an end point of an etch process for the wafer, including a sensor for detecting the wavelength of light generated from the inside of the chamber during the etch process. A control part(132) determines the end point of the etch process, connected to the sensor.