| 摘要 |
An auto precharge circuit of a semiconductor memory device is provided to reduce current consumption by reducing the input of a clock signal applied to an auto precharge circuit, by using a control signal generated as a DRAM is activated. In an auto precharge clock signal generation part(300), a pulse generation part(310) receives a bank enable signal and generates a pulse signal. A switching part(330) determines the generation of an auto precharge clock signal by receiving the pulse signal and a row active signal. A clock signal generation part(370) receives a clock signal and an output signal of the switching part and generates an auto precharge clock signal in response to the output signal of the switching part.
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