| 摘要 |
<p>A method for fabricating a semiconductor device is provided to suppress occurrence of a burying error of a void by depositing easily a barrier metal and a Cu layer within a via-hole. An insulating layer, a first mask(20), and a second mask(22) having an etching property different from an etching property of the first mask are formed on a substrate(10). The first and second masks are removed from a via-hole region. An anisotropic etching process for the insulating layer of the via-hole region is performed. The second mask of a wiring trench region including the via-hole region is removed. An isotropic etching process for the first mask is performed by using the second mask so that the first mask remains within the wiring trench region. A via-hole(26) having a broad width part(34) and a wiring trench(32) connected with the broad width part are formed on the insulating layer. A wiring layer is buried into the via-hole and the wiring trench.</p> |
