METHOD AND EQUIPMENT FOR FORMING CRYSTALLINE SILICON THIN FILM

摘要

Hydrogen gas is introduced into a film forming chamber (10) wherein a silicon sputter target (2) and a substrate (S) whereupon a film is to be formed are arranged, high-frequency power is applied to the gas, and plasma having a value Halpha/SiH* at 0.3 to 1.3 is generated in the film forming chamber. The silicon sputter target (2) is chemically sputtered by the plasma, and a crystalline silicon thin film is formed on the substrate (S). The high-quality crystalline silicon thin film can be safely formed at a relatively low temperature at a low cost.