| 摘要 |
An etching apparatus comprises a workpiece holder ( 21 ) for holding a workpiece (X), a plasma generator ( 10, 20 ) for generating a plasma ( 30 ) in a vacuum chamber ( 3 ), an orifice electrode ( 4 ) disposed between the workpiece holder ( 21 ) and the plasma generator ( 10, 20 ), and a grid electrode ( 5 ) disposed upstream of the orifice electrode ( 4 ) in the vacuum chamber ( 3 ). The orifice electrode ( 4 ) has orifices ( 4 a) defined therein. The etching apparatus further comprises a voltage applying unit ( 25, 26 ) for applying a voltage between the orifice electrode ( 4 ) and the grid electrode ( 5 ) to accelerate ions from the plasma ( 30 ) generated by the plasma generator ( 10, 20 ) and to pass the extracted ions through the orifices ( 4 a) in the orifice electrode ( 4 ). A first collimated neutral particle beam is generated and applied to the workpiece (X) for etching a surface of a processing layer ( 60 ) of the workpiece (X). A second collimated neutral particle beam is generated, and a mask ( 50 ) for covering at least a portion of the surface of the processing layer ( 60 ) is sputtered by the second neutral particle beam to form a protecting film ( 80 ) on a sidewall ( 60 a) of the processing layer ( 60 ) for protecting the sidewall ( 60 a) of the processing layer ( 60 ) from being etched by the first neutral particle beam.
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