NON-VOLATILE MEMORY DEVICE AND METHOD OF FORMING THE SAME

摘要

A non-volatile memory device is provided to perform a cleaning process using a cleaning solution with strong detergence by including a barrier spacer layer which protects a control gate layer including a metal layer from a cleaning solution and oxygen. An isolation layer is formed in a substrate to define an active region. A string select line(SSL) and a ground select line(GSL) cross the upper part of the active region. A plurality of parallel wordlines(WL) cross the upper part of the active region. A first gate insulation layer, a first floating gate(5a) with first and second sidewalls, a first intergate dielectric pattern(13a) which partially covers the first floating gate and is extended to contact the first sidewall, a first control gate(20a) in contact with the first floating gate and the first intergate dielectric pattern and a first mask pattern are stacked on the substrate. Both sidewalls of the first mask pattern and the first control gate and the second sidewall of the first floating gate are covered with a first barrier spacer. The first sidewall of the first floating gate is covered with a first thermal oxide layer. A second gate insulation layer, a second floating gate(5b), a second intergate dielectric pattern(13b), a second control gate(20b) and a second mask pattern(21b) are stacked on the substrate. Both sidewalls of the second mask pattern and the second control gate are covered with a second barrier spacer. Both sidewalls of the second floating gate are covered with a second thermal oxide layer.