| 摘要 |
<p>A method for exposing a wafer is provided to form photoresist patterns having a uniform line width by irradiating selectively beams of high energy or low energy according to the density of the mask patterns. A mask pattern is transferred onto a wafer including a photoresist layer by irradiating a first energy beam on a first aperture plate(S110). In the first aperture plate, the inner sigma influence of the mask pattern is larger than the outer sigma influence of the mask pattern. The mask pattern is transferred onto the wafer by irradiating a second energy beam on a second aperture plate(S120). In the second aperture plate, the outer sigma influence of the mask pattern is larger than the inner sigma influence of the mask pattern. The energy of the second energy beam is lower than the energy of the first energy beam.</p> |
