WHITE LIGHT EMITTING DEVICE

摘要

A white light emitting device is provided to form a desired monolithic white light emitting device by a relatively simple process by incorporating two light emitting parts by a wafer bonding process and/or a metal bonding process. A first light emitting part(20) is bonded to the upper part of a conductive sub-mount substrate by a metal layer wherein a p-type nitride semiconductor layer(26), a first active layer, an n-type nitride semiconductor layer(22) and a conductive substrate are sequentially stacked in the first light emitting part. A second light emitting part(40) is formed on a partial region of the upper surface of the conductive substrate wherein a p-type AlGaInP-based semiconductor layer(46), a second active layer and an n-type AlGaInP-based semiconductor layer(42) are sequentially stacked in the second light emitting part. P-side and n-side electrodes(32,49) are respectively formed on the lower surface of the conductive sub-mount substrate and on the upper surface of the n-type AlGaInP-based semiconductor layer. The conductive substrate of the first light emitting part is directly bonded to the p-type semiconductor layer of the second light emitting part by a wafer bonding method, and the p-side and n-side electrodes are common electrodes of the first and the second light emitting part.