发明名称 Low power low area precharge technique for a content addressable memory
摘要 A technique to pre-charge a CAM block array including a plurality of CAM blocks that is organized into at least one rectangular array having rows each having a plurality of CAM blocks, an associated GMAT line, an associated LMAT line, and a group of CAM cells. The pre-charge technique of the present invention accommodates for all CAM block configurations without compromising performance at the cost of silicon area. In one example embodiment, this is accomplished by precharging each LMAT line in the CAM block array. A predetermined amount of delay is then applied substantially after precharging each LMAT line. Each GMAT line in the CAM block array is then precharged.
申请公布号 US7145789(B2) 申请公布日期 2006.12.05
申请号 US20050029927 申请日期 2005.01.05
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 PADATTIL KULIYAMPATTIL NISHA
分类号 G11C15/00;G11C7/00 主分类号 G11C15/00
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