发明名称 |
Asymmetric field effect transistor |
摘要 |
A field effect transistor includes a channel region under a gate stack formed on a semiconductor structure. The field effect transistor also includes a drain region formed with a first dopant doping a first side of the channel region, and includes a source region formed with the first dopant doping a second side of the channel region. The drain and source regions are doped asymmetrically such that a first charge carrier profile between the channel and drain regions has a steeper slope than a second charge carrier profile between the channel and source regions.
|
申请公布号 |
US7145196(B2) |
申请公布日期 |
2006.12.05 |
申请号 |
US20040003612 |
申请日期 |
2004.12.02 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HUR KI-JAE;OH KYUNG-SEOK;PARK JOO-SUNG;SHIN JUNG-HYUN |
分类号 |
H01L27/108;H01L21/336;H01L21/8242;H01L29/745;H01L29/78 |
主分类号 |
H01L27/108 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|