| 摘要 |
A method for growing a nitride semiconductor single crystal is provided to increase a horizontal direction growth rate by injecting halogen-based gas and growing the nitride semiconductor single crystal. A nitride buffer layer is formed on a substrate(S23). A plurality of dielectric mask patterns are formed at a constant interval on the nitride buffer layer(S25). A nitride semiconductor single crystal is grown on the nitride buffer layer by injecting halogen-based gas and using an MOCVD method(S27). The nitride buffer layer is formed with a low-temperature growth nitride layer satisfying AlxInyGa9(1-x) where 0<=x<=1, 0<=y<=1, and 0<=x+y<=1.
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