METHOD OF CLEANING A SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME

摘要

A method for cleaning a semiconductor device is provided to prevent generation of organic polymer formed on the surface of a lower electrode caused by a residual organic compound by cleaning the organic compound while using an ozone aqueous solution. An oxide layer having an opening is formed. A conductive layer pattern(120) is formed in the opening. The oxide layer is removed by using a metal corrosion avoiding agent, surfactant or a LAL(limulus amebocyte lysate) solution including a mixture of the metal corrosion avoiding agent and the surfactant such that the LAL solution includes an organic compound, hydrogen fluoride ammonium, fluoride hydrogen acid and water. In removing the oxide layer by using the LAL solution, the organic compound absorbed to the surface of the conductive layer pattern is eliminated by using an ozone aqueous solution including ozone of 5~100 ppm and hydrofluoric acid of 0.001~0.02 weight percent. The process for removing the oxide layer and the process for removing the organic compound remaining on the conductive pattern are performed by an in-situ method.