APPARATUS FOR CLEANING OF CVD CHAMBER AND METHOD OF CLEANING THE SAME

摘要

An apparatus for cleaning a CVD chamber is provided to improve cleaning efficiency in a CVD chamber by directly supplying NxOy gas to the CVD chamber whereas NF3 cleaning gas is transformed into a plasma state by a remote plasma generating apparatus so as to be supplied to the CVD chamber. First cleaning gas including NF3 gas is ionized by an RPS(remote plasma source) so as to be supplied by a first cleaning gas supplying line(10). Second cleaning gas including NxOy gas is supplied by a second cleaning gas supplying line(20). The first cleaning gas passes through the RPS to be supplied as an ionized state to the inside of a CVD chamber. The second cleaning gas is directly supplied to the inside of the CVD chamber while not passing through the RPS. The cleaning gas may be NF3 gas diluted by Ar gas. The second cleaning gas may be NxOy gas to which Ar gas is add.