| 摘要 |
Disclosed is a semiconductor device comprising a semiconductor substrate (1), a gate insulating film such as a gate oxide film (2) formed on the substrate, and a gate electrode (3) formed on the insulating film. The gate electrode (3) has a metal compound film (3a) which is formed by CVD using a raw material such as a W(CO)6 gas that contains a metal carbonyl and at least one of an Si-containing gas and an N-containing gas. The work function of the metal compound film (3a) can be controlled by changing the amount of Si and/or N contained therein.
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