发明名称 |
METHOD FOR MANUFACTURING COMPOUND SEMICONDUCTOR EPITAXIAL SUBSTRATE |
摘要 |
Disclosed is a method for manufacturing a compound semiconductor epitaxial substrate with few hollow defects. The method for manufacturing a compound semiconductor epitaxial substrate comprises a step for epitaxially growing an InGaAs layer on an InP single crystal substrate or on a layer lattice-matched to the InP single crystal substrate at a V/III ratio of 10-100, a growth temperature of 630- 700°C and a growth rate of 0.6-2 mum/h.
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申请公布号 |
KR20060123287(A) |
申请公布日期 |
2006.12.01 |
申请号 |
KR20067011373 |
申请日期 |
2006.06.09 |
申请人 |
SUMITOMO CHEMICAL CO., LTD. |
发明人 |
TAKADA TOMOYUKI;KOHIRO KENJI |
分类号 |
C23C16/30;H01L21/20;C30B25/02;C30B29/40;H01L21/205 |
主分类号 |
C23C16/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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