SILICON CARBIDE SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

The increase in the forward voltage due to variation with time of a bipolar semiconductor device using a silicon carbide semiconductor is prevented. The growing surface of a crystal of a silicon carbide semiconductor is a surface at an off angle Theta of 8° with respect to the (000-1)carbon-face of the crystal. On this growing surface, a buffer layer, a drift layer, a p-type semiconductor layer, and an n-type semiconductor layer are formed at a film-forming rate of 10 mum/h at which the speed of increase of the thickness of the film per hour is three or more times higher than conventional. To increase the film-forming rate, the flowrates of the material gases, i.e., silane and propane and the dopant gas are greatly increased.