发明名称 SEMICONDUCTOR WAFER AND METHOD OF FABRICATING THE SAME
摘要 A semiconductor wafer and a manufacturing method thereof are provided to improve the performance of NMOS(N channel Metal Oxide Semiconductor) and PMOS(P channel MOS) transistors by using various crystal orientations. A semiconductor wafer includes a base substrate, an insulating layer, and a semiconductor layer. The insulating layer is formed on the base substrate. The semiconductor layer(10b,12b) is formed on the insulating layer. The semiconductor layer has a first surface region and a second surface region. The first surface region(10c) has a first orientation of crystallographic plane. The second surface region(12c) has a second orientation of crystallographic plane.
申请公布号 KR100655437(B1) 申请公布日期 2006.12.01
申请号 KR20050072928 申请日期 2005.08.09
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK, YOUNG SOO;CHO, KYOO CHUL;HAN, SHIN HYEOK;KANG, TAE SOO
分类号 H01L21/20 主分类号 H01L21/20
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