发明名称 |
SEMICONDUCTOR WAFER AND METHOD OF FABRICATING THE SAME |
摘要 |
A semiconductor wafer and a manufacturing method thereof are provided to improve the performance of NMOS(N channel Metal Oxide Semiconductor) and PMOS(P channel MOS) transistors by using various crystal orientations. A semiconductor wafer includes a base substrate, an insulating layer, and a semiconductor layer. The insulating layer is formed on the base substrate. The semiconductor layer(10b,12b) is formed on the insulating layer. The semiconductor layer has a first surface region and a second surface region. The first surface region(10c) has a first orientation of crystallographic plane. The second surface region(12c) has a second orientation of crystallographic plane.
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申请公布号 |
KR100655437(B1) |
申请公布日期 |
2006.12.01 |
申请号 |
KR20050072928 |
申请日期 |
2005.08.09 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK, YOUNG SOO;CHO, KYOO CHUL;HAN, SHIN HYEOK;KANG, TAE SOO |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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