发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 <p>A semiconductor device includes at least one semiconductor structure having a plurality of external connection portions on an upper surface, and an insulating member which is made of a resin containing reinforcing materials and arranged on a side of the semiconductor structure. An insulating film is formed on the upper surface of the semiconductor structure, except the external connection portions, and on an upper surface of the insulating member. A plurality of upper wirings each of which has a connection pad portion are located on an upper side of the insulating film and electrically connected to a corresponding one of the external connection portions of the semiconductor structure. The connection pad portion of at least one of the upper wirings is arranged above an upper surface of the insulating member.</p>
申请公布号 KR100651628(B1) 申请公布日期 2006.12.01
申请号 KR20060095323 申请日期 2006.09.29
申请人 发明人
分类号 H01L23/52;H01L21/3205;H01L21/56;H01L21/60;H01L21/68;H01L23/12;H01L23/16;H01L23/31;H01L23/48;H01L23/498 主分类号 H01L23/52
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