NARROW-BODY DAMASCENE TRI-GATE FINFET HVING THINNED BODY

摘要

A method of forming a fin field effect transistor includes forming a fin (205) and forming a source region (210) on a first end of the fin (205) and a drain region (215) on a second end of the fin (205). The method further includes forming a dummy gate (505) with a first semi-conducting material in a first pattern over the fin (205) and forming a dielectric layer (605) around the dummy gate (505). The method also includes removing the first semi-conducting material to leave a trench (705) in the dielectric layer (605) corresponding to the first pattern, thinning a portion of the fin (205) exposed within the trench (705), and forming a metal gate (1005) within the trench (705).