| 摘要 |
A method for forming a passivation layer of a light emitting device is provided to reduce a fabricating cost of a photomask by selectively forming a dielectric passivation layer in a portion except an electrode part without using an additional photomask. A dielectric thin film(56) is coated on the upper surface of a light emitting diode(200) that is formed on a substrate(50) transparent with respect to ultraviolet rays and has an opaque electrode on its upper part. Photoresist(57) is deposited on the dielectric thin film. Ultraviolet rays are irradiated from the transparent substrate toward the photoresist. The photoresist is developed to expose the dielectric thin film only in a portion where the electrode of the light emitting diode is formed. The exposed dielectric thin film is removed by a dry etch process. The dielectric thin film includes one of SiOx(1.5<=x<=2), SiNx(1<=x<=1.3), TiOx(1.5<=x<=2) or SiOxNy(0.75<=x<=1 and 0.5<=y<=1.3).
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