发明名称 MULTI-PORT SEMICONDUCTOR MEMORY DEVICE HAVING VARIABLE ACCESS PATH AND METHOD THEREFORE
摘要 A multi-port semiconductor memory device having a variable access path and a method thereof are provided to enable efficient usage of memory regions, by variably controlling an access path between input/output ports and memory regions. A multi-port semiconductor memory device comprises a plurality of different input/output ports and a memory array divided into a plurality of different memory regions. A selection control part(400a) variably controls an access path between the memory regions and the input/output ports, in order for each memory region to be accessed through at least one input/output port. The access path control of the selection control part is performed in response to external command signals.
申请公布号 KR100655081(B1) 申请公布日期 2006.12.01
申请号 KR20050127534 申请日期 2005.12.22
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, NAM JONG;LEE, HO CHEOL;KWON, KYOUNG HWAN;HWANG, HYONG RYOL;AHN, HYO JOO
分类号 G11C7/00;G11C7/10;G11C11/4096 主分类号 G11C7/00
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