发明名称 |
MULTI-PORT SEMICONDUCTOR MEMORY DEVICE HAVING VARIABLE ACCESS PATH AND METHOD THEREFORE |
摘要 |
A multi-port semiconductor memory device having a variable access path and a method thereof are provided to enable efficient usage of memory regions, by variably controlling an access path between input/output ports and memory regions. A multi-port semiconductor memory device comprises a plurality of different input/output ports and a memory array divided into a plurality of different memory regions. A selection control part(400a) variably controls an access path between the memory regions and the input/output ports, in order for each memory region to be accessed through at least one input/output port. The access path control of the selection control part is performed in response to external command signals.
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申请公布号 |
KR100655081(B1) |
申请公布日期 |
2006.12.01 |
申请号 |
KR20050127534 |
申请日期 |
2005.12.22 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, NAM JONG;LEE, HO CHEOL;KWON, KYOUNG HWAN;HWANG, HYONG RYOL;AHN, HYO JOO |
分类号 |
G11C7/00;G11C7/10;G11C11/4096 |
主分类号 |
G11C7/00 |
代理机构 |
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