| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which optional breakdown voltage in need can be secured, in which connection teardown does not occur even in the case of surge as well as in steady state, and in which the connection teardown does not happen, and sufficient switching speed can be secured even when high partial pressure resistance is applied. SOLUTION: In a semiconductor device 130, n pieces of transistor elements Tr<SB>1</SB>-Tr<SB>9</SB>processed in insulated separation are connected serially in order between a ground potential and predetermined potential; a gate terminal in a first stage transistor element Tr<SB>1</SB>is made to be an input terminal, and a gate terminal in each stage transistor elements Tr<SB>2</SB>-Tr<SB>9</SB>excluding the first stage transistor element Tr<SB>1</SB>is connected in order between each stage parallel RC elements RC<SB>1</SB>-RC<SB>9</SB>which are connected serially between the ground potential and the predetermined potential, respectively; and output is taken out from a predetermined potential side terminal in an n-th stage transistor element Tr<SB>9</SB>. COPYRIGHT: (C)2007,JPO&INPIT
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