| 摘要 |
PROBLEM TO BE SOLVED: To provide plasma CVD equipment which can form a thin film at a high deposition speed while suppressing ion damages. SOLUTION: The plasma CVD equipment 1 comprises a substrate folder 14; a cathode electrode 19 which is so arranged as to face a processed substrate 10 set up on the substrate folder 14, and consists of a plate-like portion 19a and projecting portions 19b projecting from the plate-like portion 19a toward the processed substrate 10; an anode electrode 20 which is arranged closer to the processed substrate 10 than to the plate-like portion 19a, and is applied with voltage having a potential different from that of the cathode electrode 19; and a sheet-like second anode electrode 21 which has the same potential as the anode electrode 20 and is arranged between the cathode electrode 19 and the processed substrate 10 as to face the cathode electrode 19, being located closer to the processed substrate 10 than to the anode electrode 20, and is formed with through-holes penetrated in the thickness direction. COPYRIGHT: (C)2007,JPO&INPIT
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