| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma CVD apparatus which can manufacture various types of thin films of high quality. SOLUTION: The plasma CVD apparatus 1 comprises a processing chamber 11, wherein a processed substrate 10 is set up, a gas supply 16a, a gas pressure controller 16b, and a plasma discharge generator 13 which is so arranged as to face the processed substrate 10. The plasma discharge generator 13 includes an anode electrode 19, a first cathode electrode 20a, and a second cathode electrode 20b. The anode electrode 19, the first cathode electrode 20a, and the second cathode electrode 20b are so arranged such that the distance between the anode electrode 19 and the first cathode electrode 20a, and the distance between the anode electrode 19 and the second cathode electrode 20b are different, and according to the gas pressure, plasma can be generated between the anode electrode 19 and the first cathode electrode 20a and/or between the anode electrode 19 and the second cathode electrode 20b. COPYRIGHT: (C)2007,JPO&INPIT
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