| 摘要 |
PROBLEM TO BE SOLVED: To provide a chemical treatment method and a chemical treatment apparatus which can reduce the variation in etching quantity in the plane of a substrate due to a difference in dipping time. SOLUTION: This is a method of washing the surface of a wafer W by dipping it in an etchant stored in an etching bath 1. In this method, the wafer W is put into the etchant from the orientation flat OF side, and then the wafer W is turned upside down in the etchant (for example, the wafer W is turned by 180°around the vertical line passing through the center of the surface as an axis), and thereafter the wafer W is taken out of the etchant in the upside down state. By this method, the wafer W is put into the etchant from the orientation flat OF side and then taken out of the etchant from the orientation flat OF side, resulting in reducing the variation in dipping time of the plane of the wafer W. COPYRIGHT: (C)2007,JPO&INPIT
|
