| 摘要 |
PROBLEM TO BE SOLVED: To provide a photoelectric conversion device which is equipped with the optimal low reflection film in a photoelectric conversion part, wherein little smear in generated, whose breakdown voltage performance is not spoiled, and which is manufactured without generating etching damages, such as a white point defect. SOLUTION: In a CCD solid-state image sensing device, independently from a gate insulating film 21, a transparent insulating film 22 is formed from a photograph sensor 2 at least to a position which comes into contact with the gate insulating film 21. A shading film 23A is formed so that the transparent insulating film 22 may cover the circumference of a transmission electrode 19, and a low reflection film 24A is formed so as to contact the transparent insulating film 22 in the opening 8. Moreover, a shading film 24B is formed so that it overlaps with the shading film 23A, and the low reflection film 24B is laminated so as to contact with the low reflection film 24A in the opening 9. The shading film 23A is made into the minimum thickness, and the film thickness of the transparent insulating film 22 as the etching stop layer is stopped to the minimum. A low reflection film 24A is made to have the minimum thickness that acts as an etching stop layer of shading film 23B. COPYRIGHT: (C)2007,JPO&INPIT
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