| 摘要 |
A semiconductor device includes a semiconductor substrate which has a major surface, and a MOS transistor which has a gate and first and second diffusion regions and which is formed on the major surface. The semiconductor device also includes a laminated structure of an SOG layer, wherein the laminated structure is composed of a base layer and a surface layer formed on the base layer. The laminated structure is formed over the MOS transistor, and the surface layer is denser than the base layer. |
