| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method thereof wherein a high inductance can be obtained in its inductive element, and in addition to this, its miniaturization is made possible. SOLUTION: In the semiconductor device, there are provided a semiconductor substrate 1 having formed electrodes 3, a first insulating resin layer 11, first wiring layers 12, a second insulating resin layer 13, and a second wiring layer 14 connected with the first wiring layers 12. Further, the second wiring layer 14 has an inductive element 15, and moreover, a magnetic body 6 is provided on an opposite surface 1b of the semiconductor substrate 1 to its surface whereon the electrodes 3 are formed. COPYRIGHT: (C)2007,JPO&INPIT
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