| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device characterized by including a MOS transistor such as a CMOS semiconductor integrated circuit, reducing variation in characteristics of the MOS transistor due to impact ionization in a highly precise power management semiconductor device or analog semiconductor device, and obtaining stable electric characteristics. SOLUTION: In manufacturing the highly precise power management semiconductor device or analog semiconductor device including the MOS transistor such as the CMOS semiconductor integrated circuit, a concentration of impurities is reduced in the vicinity of a silicon surface of a source drain region with a low impurity concentration, thereby reducing the impact ionization taking place in the operation of the MOS transistor and reducing the variation in characteristics of the MOS transistor. Further, by performing the above step concurrently with ion implantation for threshold voltage adjustment of the MOS transistor, the manufacturing method of the semiconductor device is provided for suppressing an increase in man-hours, with high accuracy, low cost and short TAT. COPYRIGHT: (C)2007,JPO&INPIT
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