| 摘要 |
PROBLEM TO BE SOLVED: To provide an etch selectivity measuring method and an etch selectivity measuring device which can determine the etch selectivity of an etched object against an etching mask under the environment wherein the etched object is actually etched. SOLUTION: From the diffracted lights reflected by the etched object 6 and a diffraction grating pattern 7, the height H1 of the diffraction grating pattern 7 before etching, the distance from the long wavelength semiconductor laser for measurement-side surface of the diffraction grating pattern 7 after etching to the bottom face of a trench, and the depth of the trench, are found. Based on these data, a difference between the height of the diffraction grating pattern 7 before and after etching is calculated. From the calculated difference in height and the depth of the trench, the etch selectivity of the etched object 6 against the etching mask 5 can be derived. COPYRIGHT: (C)2007,JPO&INPIT
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