发明名称 High plasma utilization for remote plasma clean
摘要 A method and apparatus for cleaning a chemical vapor deposition chamber are provided. The chemical vapor deposition chamber includes an inlet that introduces reactive species into the chamber from a remote plasma source while bypassing a gas distribution assembly of the chamber and an inlet that introduces reactive species from a remote plasma source into the chamber via the gas distribution assembly.
申请公布号 US2006266288(A1) 申请公布日期 2006.11.30
申请号 US20050139349 申请日期 2005.05.27
申请人 APPLIED MATERIALS, INC. 发明人 CHOI SOO Y.
分类号 C23C16/00;B08B6/00 主分类号 C23C16/00
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