| 摘要 |
A plasma processing method for forming a silicon nitride film is provided. A nitrogen-containing plasma is used to nitride silicon on a surface of a target object in a processing chamber of a plasma processing apparatus. The plasma processing method includes a first step of performing a plasma processing under a condition wherein a nitriding reaction is mediated mainly through radical species of the nitrogen-containing plasma, and a second step of performing a plasma processing under a condition wherein the nitriding reaction is mediated mainly through ion species of the nitrogen-containing plasma.
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