| 摘要 |
Nickel silicide contact regions are formed on a source ( 2 ), drain ( 3 ) and polycrystalline silicon gate ( 5 ) of an integrated circuit transistor by annealing it after a nickel layer has been deposited on the source, drain, and gate, with no cap layer on the nickel layer. Nickel silicide bridging between the gate and source and/or drain is avoided or eliminated by using a chrome etching process to remove un-reacted nickel and nickel remnants from exposed surfaces of dielectric spacers ( 6 A,B) located between the gate and source and between the gate and drain. The chrome etching process includes use of a solution including cerric ammonium nitrate, nitric acid, and acetic acid.
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