发明名称 Nonvolatile semiconductor memory device
摘要 A nonvolatile semiconductor memory device according to the present invention comprises associating means for associating a faulty block with a redundant block, a block switching circuit for selecting the associated redundant block when a memory block is associated with the redundant block, an error detection circuit for detecting an error in an accessing operation to the memory block, a faulty block identification circuit for identifying the memory block having the detected error as a faulty block when the error is detected and associating the faulty block with the redundant block in the case where the redundant block which is not associated with the faulty block exists.
申请公布号 US2006268635(A1) 申请公布日期 2006.11.30
申请号 US20060440733 申请日期 2006.05.24
申请人 SHARP KABUSHIKI KAISHA 发明人 MURAKOSHI KENICHI;MORIKAWA YOSHINAO
分类号 G11C29/00 主分类号 G11C29/00
代理机构 代理人
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