| 摘要 |
A semiconductor device includes a semiconductor substrate, an insulated gate type transistor formed in the semiconductor substrate, and an insulated gate type capacitor formed in the semiconductor substrate. The insulated gate type transistor includes a gate insulating film of the transistor selectively formed on the semiconductor substrate, a gate electrode of the transistor formed on the gate insulating film of the transistor, and source-drain regions formed to interpose a body region of the transistor provided under the gate electrode of the transistor in a surface of the semiconductor substrate. The insulated gate type capacitor includes a gate insulating film of the capacitor selectively formed on the semiconductor substrate, a gate electrode of the capacitor formed on the gate insulating film of the capacitor, and extraction electrode regions formed to interpose a body region of the capacitor provided under the gate electrode of the capacitor in the surface of the semiconductor substrate. The extraction electrode regions have a common potential. The insulated gate type transistor has pocket regions of the transistor of a reverse conductivity type to that of the source-drain regions formed from the source-drain regions to a part of the body region of the transistor, the insulated gate type capacitor has no region of a reverse conductivity type to that of the extraction electrode regions in a vicinal region of the extraction electrode regions in the body region side of the capacitor, and the body region of the capacitor and the extraction electrode regions are formed to have different conductivity types from each other.
|
