| 摘要 |
<P>PROBLEM TO BE SOLVED: To approximately equalize characteristics among storage cells, and to sufficiently decrease the quantity of a current required for a phase change even when the sizes of the storage cells are reduced. <P>SOLUTION: A phase-change memory has the storage cell 1. The storage cell 1 has: a first electrode 11; and a conductive section having at least two conductors 13 being formed on the first electrode, and also having approximately equal shapes and being separated by high-resistance films 12 having a resistance higher than these conductors. The storage cell 1 further has: a recording layer 14 being formed on the conductive section and having a phase-change material to be phase-changed, between a first phase state having a first resistivity and a second phase state having a second resistivity different from the first resistivity; and a second electrode 15 formed on the recording layer. <P>COPYRIGHT: (C)2007,JPO&INPIT |
