| 摘要 |
PROBLEM TO BE SOLVED: To provide a plating method by which a conductive film is formed through an electroplating method, a method for manufacturing a semiconductor device using the same, and a plating apparatus for stably forming a plating film. SOLUTION: In the plating method, steps 101 and 103 are successively performed. In step 101, a film formation target surface of a wafer 109 is connected to a cathode electrode 107 and inclined relative to a liquid level of a plating solution 103, and the wafer 109 is immersed into a plating solution 103 while first electric current is applied to the cathode electrode 107 and an anode electrode 105 placed in the plating solution 103. In step 103, after the film formation target surface is immersed into the plating solution 103, second electric current is applied to the cathode electrode 107 and the Cu anode electrode 105, and a metal film is grown on the film formation target surface through the electroplating method. In step 101, the first electric current is regulated based on the angle of inclination of the film formation target surface relative to the liquid level. COPYRIGHT: (C)2007,JPO&INPIT
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