Method of forming isolation film of semiconductor device

摘要

A method of forming an isolation film of a semiconductor device wherein trenches are formed by etching a semiconductor substrate using HBr and O₂. Trench profiles with a slope can be formed, ISO gap fill can be facilitated, and voids are not generated. Accordingly, the invention is advantageous in that it can secure the reliability of devices and can improve the yield through ISO module process set-up.