High performance, low-leakage static random access memory (SRAM)

摘要

Systems and methods are provided for reducing leakage current and maintaining high performance in a static random access memory (SRAM). One embodiment discloses a memory array system operative to store data bits in individually addressable rows and columns. The memory array system comprises a plurality of memory blocks, each of the plurality of memory blocks having a plurality of memory rows and a row peripheral circuit operative to switch a memory block from a retention mode to an activation mode in response to an addressing of a memory row within the memory block.