| 摘要 |
The semiconductor device comprises a semiconductor substrate 10 of a first conduction type, a first well 32 a of the first conduction type formed in the semiconductor substrate 10, a second well 32 b of a second conduction type formed in the semiconductor substrate 10, and an impurity layer 14 of the second conduction type buried in the semiconductor substrate 10 below the first well 32 a and below the second well 32 b and connected to the second well 32 b, for applying a bias voltage to the second well 32 b, a contact region 34 of the first conduction type are formed selectively in the impurity layer 14 immediately below the first well 32 a, and the first well 32 a is connected to the semiconductor substrate 10 via the contact region 34.
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